Toshiba SSM6N44FE(TE85L,F) Dual N-channel MOSFET, 100 mA, 30 V SSM6, 6-Pin ES

SSM6N44FE-TE85L-F- Toshiba SSM6N44FE(TE85L,F) Dual N-channel MOSFET, 100 mA, 30 V SSM6, 6-Pin ES
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Series:
SSM6
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.55mm
Width:
1.2mm
Length:
1.2mm
Maximum Drain Source Resistance:
7 Ω
Package Type:
ES
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N-channel MOSFET 100 mA 30 V SSM6 6-Pin ES manufactured by Toshiba. The manufacturer part number is SSM6N44FE(TE85L,F). It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.55mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.2mm. It provides up to 7 ω maximum drain source resistance. The package is a sort of es. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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