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This is Dual N/P-channel MOSFET 180 mA 20 V 6-Pin US manufactured by Toshiba. The manufacturer part number is SSM6L35FU(TE85L,F). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 200 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 1.25mm. It provides up to 20 ω maximum drain source resistance. The package is a sort of us. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
For more information please check the datasheets.
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