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Toshiba SSM6J51TU(TE85L,F) P-channel MOSFET, 4 A, 12 V SSM6, 6-Pin UF

SSM6J51TU-TE85L-F- Toshiba SSM6J51TU(TE85L,F) P-channel MOSFET, 4 A, 12 V SSM6, 6-Pin UF
Toshiba

Product Information

Maximum Drain Source Voltage:
12 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Series:
SSM6
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.7mm
Width:
1.7mm
Length:
1.7mm
Maximum Drain Source Resistance:
150 mΩ
Package Type:
UF
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 4 A 12 V SSM6 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6J51TU(TE85L,F). It has a maximum of 12 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. The product ssm6, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.7mm wide. Its accurate length is 1.7mm. It provides up to 150 mω maximum drain source resistance. The package is a sort of uf. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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