Toshiba SSM3K35MFV(TPL3) N-channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM

SSM3K35MFV-TPL3- Toshiba SSM3K35MFV(TPL3) N-channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM
Toshiba

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Series:
SSM3
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1V
Height:
0.5mm
Width:
0.8mm
Length:
1.2mm
Maximum Drain Source Resistance:
3 Ω
Package Type:
VESM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
180 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 180 mA 20 V SSM3 3-Pin VESM manufactured by Toshiba. The manufacturer part number is SSM3K35MFV(TPL3). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.5mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.2mm. It provides up to 3 ω maximum drain source resistance. The package is a sort of vesm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 180 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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N-Channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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