Toshiba SSM3J35FS(TE85L,F) P-channel MOSFET, 100 mA, 20 V SSM3, 3-Pin SSM

SSM3J35FS-TE85L-F- Toshiba SSM3J35FS(TE85L,F) P-channel MOSFET, 100 mA, 20 V SSM3, 3-Pin SSM
Toshiba

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
100 mW
Series:
SSM3
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1V
Height:
0.7mm
Width:
0.8mm
Length:
1.6mm
Maximum Drain Source Resistance:
44 Ω
Package Type:
SSM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 100 mA 20 V SSM3 3-Pin SSM manufactured by Toshiba. The manufacturer part number is SSM3J35FS(TE85L,F). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 100 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. It provides up to 44 ω maximum drain source resistance. The package is a sort of ssm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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