Toshiba 2SK4013,S5Q(J N-channel MOSFET, 6 A, 800 V 2SK, 3-Pin SC-67

2SK4013-S5Q-J Toshiba 2SK4013,S5Q(J N-channel MOSFET, 6 A, 800 V 2SK, 3-Pin SC-67
2SK4013,S5Q(J
Toshiba

Product Information

Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SC-67
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
45 W
Series:
2SK
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
1.7 Ω
RoHs Compliant
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This is N-channel MOSFET 6 A 800 V 2SK 3-Pin SC-67 manufactured by Toshiba. The manufacturer part number is 2SK4013,S5Q(J. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of sc-67. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. The product 2sk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15mm. Its forward diode voltage is 1.7v . It provides up to 1.7 ω maximum drain source resistance.

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2SK4013, Silicon N-Channel MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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