Toshiba 2SK3878(F) N-channel MOSFET, 9 A, 900 V 2SK, 3-Pin TO-3PN

2SK3878-F- Toshiba 2SK3878(F) N-channel MOSFET, 9 A, 900 V 2SK, 3-Pin TO-3PN
2SK3878(F)
Toshiba

Product Information

Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Series:
2SK
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
19mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.3 Ω
RoHs Compliant
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This is N-channel MOSFET 9 A 900 V 2SK 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is 2SK3878(F). While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.8mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. The product 2sk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 19mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.3 ω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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