Toshiba 2SJ168(F) P-channel MOSFET, 200 mA, 60 V 2SJ, 3-Pin SC-59

2SJ168-F- Toshiba 2SJ168(F) P-channel MOSFET, 200 mA, 60 V 2SJ, 3-Pin SC-59
2SJ168(F)
Toshiba

Product Information

Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
2 Ω
Package Type:
SOT-346
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
P
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Series:
2SJ
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is P-channel MOSFET 200 mA 60 V 2SJ 3-Pin SC-59 manufactured by Toshiba. The manufacturer part number is 2SJ168(F). While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.5mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. It provides up to 2 ω maximum drain source resistance. The package is a sort of sot-346. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. The product 2sj, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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Semi,Descrete,MOSFET,(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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