Category:
Power MOSFET
Dimensions:
3.04 x 1.4 x 1.02mm
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
135 mΩ
Package Type:
Micro6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
633 pF @ -10 V
Length:
3.04mm
Pin Count:
3
Typical Turn-Off Delay Time:
588 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.02mm
Typical Turn-On Delay Time:
350 ns
Minimum Operating Temperature:
-55 °C
