Infineon IRFI7536GPBF N-channel MOSFET, 86 A, 60 V HEXFET, 3-Pin TO-220FP

IRFI7536GPBF Infineon  N-channel MOSFET, 86 A, 60 V HEXFET, 3-Pin TO-220FP
IRFI7536GPBF
Infineon

Product Information

Maximum Continuous Drain Current:
86 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
130 nC @ 10 V
Channel Type:
N
Length:
10.63mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
3.4 mΩ
RoHs Compliant
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This is N-channel MOSFET 86 A 60 V HEXFET 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IRFI7536GPBF. While 86 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-220 fp. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 130 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.63mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 3.4 mω maximum drain source resistance.

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IRFI7536GPbF, HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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