Infineon IRFH3702TRPBF N-channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN

IRFH3702TRPBF Infineon  N-channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN
Infineon

Product Information

Maximum Continuous Drain Current:
42 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
PQFN 3 x 3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.6 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
11.8 mΩ
RoHs Compliant
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This is N-channel MOSFET 42 A 30 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH3702TRPBF. While 42 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.6 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 11.8 mω maximum drain source resistance.

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IRFH3702PbF N-channel HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Infineon IRFH3702TRPBF N-channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFH3702TRPBF N-channel MOSFET, 42 A, 30 V HEXFET, 8-Pin PQFN.
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Yes. We ship IRFH3702TRPBF Internationally to many countries around the world.