Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
8.3 A
Width:
4mm
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
18 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1640 pF @ 25 V
Length:
5mm
Pin Count:
8
Forward Transconductance:
11S
Typical Turn-Off Delay Time:
26 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
