Vishay SiHP18N50C-E3 N-channel MOSFET, 17 A, 500 V, 3-Pin TO-220AB

SiHP18N50C-E3 Vishay  N-channel MOSFET, 17 A, 500 V, 3-Pin TO-220AB
SiHP18N50C-E3
Vishay

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
220 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.49mm
Width:
4.65mm
Length:
10.51mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Maximum Drain Source Resistance:
290 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 17 A 500 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SiHP18N50C-E3. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 120 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 220 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.49mm. Furthermore, the product is 4.65mm wide. Its accurate length is 10.51mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 290 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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IRFB18N50K, SiHFB18N50K, Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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