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Vishay SiHG28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC

SiHG28N60EF-GE3 Vishay N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC
SiHG28N60EF-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Series:
EF Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
123 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 28 A 600 V EF Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SiHG28N60EF-GE3. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product ef series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 123 mω maximum drain source resistance.

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SiHG28N60EF, EF Series Power MOSFET with Fast Body Diode(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search SiHG28N60EF-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14131476. Please check your shopping cart at the time of order.
You can order Vishay brand products with SiHG28N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SiHG28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC. You can also check on our website or by contacting our customer support team for further order details on Vishay SiHG28N60EF-GE3 N-channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14131476 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14131476.
Yes. We ship SiHG28N60EF-GE3 Internationally to many countries around the world.
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