Category:
Power MOSFET
Dimensions:
0.84 x 0.84 x 0.213mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
0.84mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Maximum Drain Source Resistance:
290 mΩ
Package Type:
MICRO FOOT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.7 nC @ 4.5 V
Channel Type:
P
Length:
0.84mm
Pin Count:
4
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-5 V, +5 V
Height:
0.213mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
