Vishay IRFR9210TRPBF P-channel MOSFET, 1.9 A, 200 V, 3-Pin TO-252

Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Typical Gate Charge @ Vgs:
8.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Maximum Drain Source Resistance:
3 Ω
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 1.9 A 200 V 3-Pin TO-252 manufactured by Vishay. The manufacturer part number is IRFR9210TRPBF. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 8.9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210, Power MOSFET(Technical Reference)

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