Maximum Continuous Drain Current:
29 A
Transistor Material:
SiC
Width:
47mm
Transistor Configuration:
3 Phase
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
Module
Number of Elements per Chip:
6
Minimum Gate Threshold Voltage:
1.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
61.5 nC @ 20 V, 61.5 nC @ 5 V
Channel Type:
N
Length:
108mm
Pin Count:
28
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
167 W
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
17mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
2.3V
Maximum Drain Source Resistance:
208 mΩ
