ROHM RHP020N06T100 N-channel MOSFET, 2 A, 60 V, 3+Tab-Pin MPT

RHP020N06T100 ROHM  N-channel MOSFET, 2 A, 60 V, 3+Tab-Pin MPT
ROHM

Product Information

Maximum Continuous Drain Current:
2 A
Width:
2.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 nC @ 10 V
Channel Type:
N
Length:
4.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
±20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
340 mΩ
RoHs Compliant
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This is N-channel MOSFET 2 A 60 V 3+Tab-Pin MPT manufactured by ROHM. The manufacturer part number is RHP020N06T100. While 2 a of maximum continuous drain current. Furthermore, the product is 2.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-89. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 340 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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