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Toshiba SSM6L12TU(TE85L,F) Dual N/P-channel MOSFET, 500 mA, 20 V, 30 V, 6-Pin UF

SSM6L12TU-TE85L-F- Toshiba SSM6L12TU(TE85L,F) Dual N/P-channel MOSFET, 500 mA, 20 V, 30 V, 6-Pin UF
Toshiba

Product Information

Maximum Drain Source Voltage:
20 V, 30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.1V
Height:
0.7mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
145 mΩ, 260 mΩ
Package Type:
UF
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N/P-channel MOSFET 500 mA 20 V 30 V 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6L12TU(TE85L,F). It has a maximum of 20 v, 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 145 mω, 260 mω maximum drain source resistance. The package is a sort of uf. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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SSM6L12TU(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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