Toshiba TK10J80E N-channel MOSFET, 10 A, 800 V TK, 3-Pin TO-3PN

TK10J80E Toshiba  N-channel MOSFET, 10 A, 800 V TK, 3-Pin TO-3PN
Toshiba

Product Information

Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
20mm
Width:
4.5mm
Length:
15.5mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 10 A 800 V TK 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is TK10J80E. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 250 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of to-3pn. It consists of 1 elements per chip. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TK10J80E, MOSFET Silicon N-Channel MOS Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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