Diodes Inc DMN2023UCB4-7 Dual N-channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818

DMN2023UCB4-7 Diodes Inc  Dual N-channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818
DiodesZetex

Product Information

Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.8mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
24 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
X1-WLB1818
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 4.5 V
Channel Type:
N
Length:
1.8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.45 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.24mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
40 mΩ
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 6 A 24 V 4-Pin X1-WLB1818 manufactured by DiodesZetex. The manufacturer part number is DMN2023UCB4-7. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.8mm wide. The product offers common drain transistor configuration. It has a maximum of 24 v drain source voltage. The product carries 1.3v of maximum gate threshold voltage. The package is a sort of x1-wlb1818. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.8mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.45 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.24mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 40 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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DMN2023UCB4, N-Channel Enhancement Mode Field MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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