Category:
Power MOSFET
Dimensions:
5.85 x 5 x 1.17mm
Maximum Continuous Drain Current:
58 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
58 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3240 pF @ 25 V
Length:
5.85mm
Pin Count:
8
Forward Transconductance:
74S
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.17mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
13.5 mΩ
