Infineon BSS223PWH6327XTSA1 P-channel MOSFET, 310 mA, 20 V OptiMOS P, 3-Pin SOT-323

BSS223PWH6327XTSA1 Infineon  P-channel MOSFET, 310 mA, 20 V OptiMOS P, 3-Pin SOT-323
BSS223PWH6327XTSA1
Infineon

Product Information

Maximum Continuous Drain Current:
310 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.5 nC @ 4.5 V
Channel Type:
P
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 mW
Series:
OptiMOS P
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.1 Ω
RoHs Compliant
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This is P-channel MOSFET 310 mA 20 V OptiMOS P 3-Pin SOT-323 manufactured by Infineon. The manufacturer part number is BSS223PWH6327XTSA1. While 310 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 250 mw maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.1 ω maximum drain source resistance.

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BSS223PW OptiMOS-P Small Signal Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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