Vishay SIS438DN-T1-GE3 N-channel MOSFET, 14.3 A, 20 V, 8-Pin PowePAK 1212

SIS438DN-T1-GE3 Vishay  N-channel MOSFET, 14.3 A, 20 V, 8-Pin PowePAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
27.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Width:
3.15mm
Length:
3.15mm
Minimum Gate Threshold Voltage:
1V
Package Type:
PowePAK 1212
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
14.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
12.5 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 14.3 A 20 V 8-Pin PowePAK 1212 manufactured by Vishay. The manufacturer part number is SIS438DN-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 27.7 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of powepak 1212. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 14.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 12.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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SiS438DN, N-Channel 20V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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