Vishay SIA921EDJ-T1-GE3 Dual P-channel MOSFET, 4.5 A, 20 V, 6-Pin SC-70

SIA921EDJ-T1-GE3 Vishay  Dual P-channel MOSFET, 4.5 A, 20 V, 6-Pin SC-70
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
7.8 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Width:
2.15mm
Length:
2.15mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
98 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual P-channel MOSFET 4.5 A 20 V 6-Pin SC-70 manufactured by Vishay. The manufacturer part number is SIA921EDJ-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 7.8 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.8mm. Furthermore, the product is 2.15mm wide. Its accurate length is 2.15mm. Whereas its minimum gate threshold voltage includes 0.5v. The package is a sort of sot-363 (sc-70). It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 98 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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SiA921EDJ, Dual P-Channel 20V (D-S) MOSFET(Technical Reference)

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