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This is Dual N/P-channel MOSFET 6.4 A 12 A 8 V 30 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4501BDY-T1-GE3. It has a maximum of 8 v, 30 v drain source voltage. With a typical gate charge at Vgs includes 16.5 nc @ 10 v, 27.5 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.1 w, 4.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, -8 v, +20 v, +8 v. In addition, the height is 1.55mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 0.45v. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.4 a, 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 20 mω, 37 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers common drain transistor configuration.
For more information please check the datasheets.
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