Vishay IRFBG30PBF N-channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB

IRFBG30PBF Vishay  N-channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB
IRFBG30PBF
Vishay

Product Information

Maximum Drain Source Voltage:
1000 V
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.01mm
Width:
4.7mm
Length:
10.41mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 3.1 A 1000 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is IRFBG30PBF. It has a maximum of 1000 v drain source voltage. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.01mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.41mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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