ROHM RCX330N25 N-channel MOSFET, 33 A, 250 V, 3-Pin TO-220FM

RCX330N25 ROHM  N-channel MOSFET, 33 A, 250 V, 3-Pin TO-220FM
RCX330N25
ROHM

Product Information

Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
5V
Height:
15.4mm
Width:
4.8mm
Length:
10.3mm
Maximum Drain Source Resistance:
230 mΩ
Package Type:
TO-220FM
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 33 A 250 V 3-Pin TO-220FM manufactured by ROHM. The manufacturer part number is RCX330N25. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 15.4mm. Furthermore, the product is 4.8mm wide. Its accurate length is 10.3mm. It provides up to 230 mω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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RCX330N25 N-ch 250V 33A Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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