Diodes Inc ZXMN2B14FHTA N-channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23

ZXMN2B14FHTA Diodes Inc  N-channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
11 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.12mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
100 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 4.3 A 20 V 3-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is ZXMN2B14FHTA. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.12mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 100 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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