Category:
Power MOSFET
Dimensions:
1.7 x 0.85 x 0.8mm
Maximum Continuous Drain Current:
650 mA
Transistor Material:
Si
Width:
0.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
960 mΩ
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.5 nC @ 8 V
Channel Type:
P
Typical Input Capacitance @ Vds:
76.5 pF @ -10 V
Length:
1.7mm
Pin Count:
3
Typical Turn-Off Delay Time:
31.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Typical Turn-On Delay Time:
7.1 ns
Minimum Operating Temperature:
-55 °C
