Diodes Inc DMP2160UFDB-7 Dual P-channel MOSFET, 3.8 A, 20 V, 6-Pin DFN

DMP2160UFDB-7 Diodes Inc  Dual P-channel MOSFET, 3.8 A, 20 V, 6-Pin DFN
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
6.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
0.9V
Height:
0.6mm
Width:
2.075mm
Length:
2.08mm
Maximum Drain Source Resistance:
86 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
RoHs Compliant
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This is Diodes Inc Dual P-channel MOSFET 3.8 A 20 V 6-Pin DFN manufactured by DiodesZetex. The manufacturer part number is DMP2160UFDB-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 6.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.4 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 0.9v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 2.075mm wide. Its accurate length is 2.08mm. It provides up to 86 mω maximum drain source resistance. The package is a sort of dfn. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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