Diodes Inc AP2281-3FMG-7 P-channel MOSFET, 2 A, 6 V, 6-Pin U-DFN2018

AP2281-3FMG-7 Diodes Inc  P-channel MOSFET, 2 A, 6 V, 6-Pin U-DFN2018
DiodesZetex

Product Information

Maximum Drain Source Voltage:
6 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.41 W
Height:
1.3mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
U-DFN2018
Number of Elements per Chip:
1
Minimum Operating Temperature:
-40 °C
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Forward Diode Voltage:
6.5V
Channel Type:
P
Maximum Operating Temperature:
+125 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 2 A 6 V 6-Pin U-DFN2018 manufactured by DiodesZetex. The manufacturer part number is AP2281-3FMG-7. It has a maximum of 6 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.41 w maximum power dissipation. In addition, the height is 1.3mm. Furthermore, the product is 1.7mm wide. Its accurate length is 3.1mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of u-dfn2018. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 6.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +125 °c. It contains 6 pins. The product offers single transistor configuration.

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AP2281, Single Slew Rate Controlled Load Switch(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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