Toshiba 2SK1829(TE85L,F) N-channel MOSFET, 50 mA, 20 V 2SK, 3-Pin USM

2SK1829-TE85L-F- Toshiba 2SK1829(TE85L,F) N-channel MOSFET, 50 mA, 20 V 2SK, 3-Pin USM
2SK1829(TE85L,F)
Toshiba

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
100 mW
Series:
2SK
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
40 Ω
Package Type:
USM
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
50 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 50 mA 20 V 2SK 3-Pin USM manufactured by Toshiba. The manufacturer part number is 2SK1829(TE85L,F). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 100 mw maximum power dissipation. The product 2sk, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 40 ω maximum drain source resistance. The package is a sort of usm. It consists of 1 elements per chip. While 50 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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