Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
208 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Drain Source Resistance:
3 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4730 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
88S
Typical Turn-Off Delay Time:
115 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.65mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
