Category:
Power MOSFET
Dimensions:
3 x 3 x 0.86mm
Maximum Continuous Drain Current:
6.5 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
30 mΩ
Package Type:
MSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1310 pF @ 15 V
Length:
3mm
Pin Count:
8
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.86mm
Typical Turn-On Delay Time:
8.5 ns
Minimum Operating Temperature:
-55 °C
