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This is N-channel MOSFET 9.3 A 200 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF630NSTRLPBF. While 9.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.3mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 300 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 35 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 82 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v .
For more information please check the datasheets.
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