Category:
Power MOSFET
Dimensions:
3 x 1.75 x 1.3mm
Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
98 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
511 pF @ 25 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.3mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
