Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
59 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.25V
Maximum Drain Source Resistance:
10 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.7 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1210 pF@ 15 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
9.8 ns
Minimum Operating Temperature:
-55 °C
