Infineon IPP096N03L G N-channel MOSFET Transistor, 35 A, 30 V OptiMOS 3, 3-Pin TO-220

IPP096N03L-G Infineon IPP096N03L G N-channel MOSFET Transistor, 35 A, 30 V OptiMOS 3, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
15.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
7.4 nC @ 4.5 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
42 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14.4 mΩ
RoHs Compliant
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This is N-channel MOSFET Transistor 35 A 30 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP096N03L G. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 15.95mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 7.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 42 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 14.4 mω maximum drain source resistance.

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MOSFET N-ch 30V 35A OptiMOS3 TO220(Technical Reference)

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