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This is N-channel MOSFET 2.3 A 20 V OptiMOS 2 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS806NEH6327XTSA1. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.75v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.7 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 82 mω maximum drain source resistance.
For more information please check the datasheets.
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