Category:
Power MOSFET
Dimensions:
10.35 x 10.05 x 4.55mm
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
10.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.8 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
170 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7580 pF @ 25 V
Length:
10.35mm
Pin Count:
7
Typical Turn-Off Delay Time:
92 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.55mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
