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Renesas RJK5015DPK-00#T0 N-channel MOSFET, 25 A, 500 V, 3-Pin TO-3P

RJK5015DPK-00-T0 Renesas RJK5015DPK-00#T0 N-channel MOSFET, 25 A, 500 V, 3-Pin TO-3P
Renesas Electronics

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
+30 V
Height:
19.9mm
Width:
4.8mm
Length:
15.6mm
Maximum Drain Source Resistance:
240 mΩ
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Renesas N-channel MOSFET 25 A 500 V 3-Pin TO-3P manufactured by Renesas Electronics. The manufacturer part number is RJK5015DPK-00#T0. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 19.9mm. Furthermore, the product is 4.8mm wide. Its accurate length is 15.6mm. It provides up to 240 mω maximum drain source resistance. The package is a sort of to-3p. It consists of 1 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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RJK5015DPK Silicon N Channel MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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