Vishay VS-FB190SA10 N-channel MOSFET, 190 A, 100 V, 4-Pin SOT-227

VS-FB190SA10 Vishay  N-channel MOSFET, 190 A, 100 V, 4-Pin SOT-227
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
250 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
568 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
12.3mm
Width:
25.7mm
Length:
38.3mm
Minimum Gate Threshold Voltage:
2V
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
190 A
Transistor Material:
Si
Maximum Drain Source Resistance:
6.5 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 190 A 100 V 4-Pin SOT-227 manufactured by Vishay. The manufacturer part number is VS-FB190SA10. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 250 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 568 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 12.3mm. Furthermore, the product is 25.7mm wide. Its accurate length is 38.3mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of sot-227. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 190 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 6.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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