Vishay SQM120N06-3m5L_GE3 N-channel MOSFET, 120 A, 60 V SQ Rugged, 3-Pin D2PAK

SQM120N06-3m5L_GE3 Vishay  N-channel MOSFET, 120 A, 60 V SQ Rugged, 3-Pin D2PAK
SQM120N06-3m5L_GE3
Vishay

Product Information

Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
9.652mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 10 V
Channel Type:
N
Length:
10.41mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.826mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 120 A 60 V SQ Rugged 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SQM120N06-3m5L_GE3. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.652mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 220 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.826mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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SQM120N06-3m5L, Automotive N-Channel 60V (D-S) 175degC MOSFET(Technical Reference)

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FAQs

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