Vishay SQ3460EV-T1_GE3 N-channel MOSFET, 8 A, 20 V SQ Rugged, 6-Pin TSOP

SQ3460EV-T1_GE3 Vishay  N-channel MOSFET, 8 A, 20 V SQ Rugged, 6-Pin TSOP
Vishay

Product Information

Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
1.7mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
TSOP-6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.3 nC @ 4.5 V
Channel Type:
N
Length:
3.1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.6 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
53 mΩ
RoHs Compliant
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This is N-channel MOSFET 8 A 20 V SQ Rugged 6-Pin TSOP manufactured by Vishay. The manufacturer part number is SQ3460EV-T1_GE3. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of tsop-6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 9.3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.6 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 53 mω maximum drain source resistance.

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SQ3460EV, Automotive N-Channel 20V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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