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This is N-channel MOSFET 18 A 200 V 3-Pin I2PAK manufactured by Vishay. The manufacturer part number is SIHF640L-GE3. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 130 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 11.3mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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