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This is N-channel MOSFET 8.1 A 250 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHF634S-GE3. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 41 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 74 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 450 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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