Vishay SI7149ADP-T1-GE3 P-channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK SO

SI7149ADP-T1-GE3 Vishay  P-channel MOSFET, 18 A, 30 V, 8-Pin PowerPAK SO
SI7149ADP-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.07mm
Width:
5mm
Length:
5.99mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Maximum Drain Source Resistance:
9.5 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 18 A 30 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SI7149ADP-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 90 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.07mm. Furthermore, the product is 5mm wide. Its accurate length is 5.99mm. Whereas its minimum gate threshold voltage includes 1.2v. The package is a sort of powerpak so-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 9.5 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Si7149ADP, P-Channel 30V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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