Vishay SI5410DU-T1-GE3 N-channel MOSFET, 12 A, 40 V, 8-Pin PowerPAK ChipFET

SI5410DU-T1-GE3 Vishay  N-channel MOSFET, 12 A, 40 V, 8-Pin PowerPAK ChipFET
Vishay

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
1.98mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Drain Source Resistance:
21 mΩ
Package Type:
PowerPAK ChipFET
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Length:
3.08mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
31 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is N-channel MOSFET 12 A 40 V 8-Pin PowerPAK ChipFET manufactured by Vishay. The manufacturer part number is SI5410DU-T1-GE3. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.98mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. It provides up to 21 mω maximum drain source resistance. The package is a sort of powerpak chipfet. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.08mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 31 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Si5410DU, N-Channel 40V (D-S) MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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