Vishay SI2333CDS-T1-GE3 P-channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23

SI2333CDS-T1-GE3 Vishay  P-channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23
SI2333CDS-T1-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V, 9 nC @ 2.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
35 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.1 A
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
RoHs Compliant
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This is P-channel MOSFET Transistor 5.1 A 12 V 3-Pin SOT-23 manufactured by Vishay. The manufacturer part number is SI2333CDS-T1-GE3. It has a maximum of 12 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 4.5 v, 9 nc @ 2.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 35 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.1 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.

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Trans MOSFET P-CH 12V 5.1A(Technical Reference)

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